PHOTOLUMINESCENCE INTENSITY IN A SEMICONDUCTOR MICROCAVITY

Citation
J. Wainstain et al., PHOTOLUMINESCENCE INTENSITY IN A SEMICONDUCTOR MICROCAVITY, Solid state communications, 99(5), 1996, pp. 317-321
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
99
Issue
5
Year of publication
1996
Pages
317 - 321
Database
ISI
SICI code
0038-1098(1996)99:5<317:PIIASM>2.0.ZU;2-3
Abstract
Measurements of the photoluminescence intensity are presented in a sem iconductor microcavity showing the strong coupling regime in the 10-80 K range. In spite of the photoluminescence enhancement in the resonan ce direction, the results are consistent with an overall excitation de cay process essentially insensitive to the microcavity effect. Evidenc e is also given for a non-thermalization of the excitation in the cavi ty-polariton dispersion relation at least in this temperature range an d large detuning conditions. Copyright (C) 1996 Elsevier Science Ltd