We numerically calculate the high-frequency Hall coefficient, R(H), fo
r the 2D Hubbard model at small hole-doping near half-filling. In the
weak-coupling regime R(H) is electron-like and comparable to its U/t=0
value. In the strong-coupling regime, where the mapping onto the t-J
model is justified, R(H) is electron-like with small amplitude in the
temperature regimes T > U, T < J, and hole-like in the temperature reg
ime J < T < U. Our conclusions are consistent with the picture of a Mo
tt transition driven by the divergence of the effective mass as oppose
d to the vanishing of the number of charge carriers. This conclusion i
s valid in the strong- and weak-coupling regimes.