A NEW METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR-STRUCTURED SIFIELD EMITTER TIP

A new current-controllable silicon field emitter tip with a metal-oxid e-semiconductor field-effect-transistor (MOSFET) structure is proposed and demonstrated. The device has a simple structure in which a conica l Si tip is made in the drain region of a MOSFET. The gate plays two r oles; one is that of a conventional extraction electrode and the other is that of a control gate for the drain current supplied to the tip. Experimental results showed that the emission current was well control led by the drain current at a gate voltage of around 80 V. Quite stabl e emission of about 0.8 mu A was obtained with a single tip at the abo ve gate voltage.