ANOMALOUS HALL RESISTANCE IN SI(001) HIGH-MOBILITY INVERSION-LAYERS AT HIGH ELECTRON CONCENTRATIONS

Authors
SEMENCHINSKY S SMRCKA L STEHNO J BORZENETS V
Citation
S. Semenchinsky et al., ANOMALOUS HALL RESISTANCE IN SI(001) HIGH-MOBILITY INVERSION-LAYERS AT HIGH ELECTRON CONCENTRATIONS, Physics letters. A, 217(6), 1996, pp. 335-339
Citations number
9
Categorie Soggetti
Physics
Journal title
Physics letters. A → ACNP
ISSN journal
03759601
Volume
217
Issue
6
Year of publication
1996
Pages
335 - 339
Database
ISI
SICI code
0375-9601(1996)217:6<335:AHRISH>2.0.ZU;2-3
Abstract
Electron transport in high mobility Si(001) MOSFETs has been studied e xperimentally in the temperature range 80 mK-4.2 K and in magnetic fie lds up to 7 T. For high electron concentrations N-s > 3 x 10(16) m(-2) , when more electron subbands are populated, we have observed an anoma lous dependence of the Hall constant, RH, On the magnetic field and th e gate voltage. This phenomenon cannot be explained within the framewo rk of conventional two-subband transport model.