We developed a soft-error simulation system which does not need any fi
tting parameter. We also proposed a new noise current model which is s
uitable for any transistor structure and alpha particle incident condi
tion. The soft-error rates of the prediction and an accelerated measur
ement agreed within one order of the magnitude. Our system can predict
the soft-error rates induced by the localized alpha source such as th
e solder bump, which can not be estimated from the accelerated measure
ment. Our soft-error simulation system is useful for the SRAM cell des
ign.