EPITAXIAL SI(001) GROWN AT 80-750 DEGREES-C BY ION-BEAM SPUTTER-DEPOSITION - CRYSTAL-GROWTH, DOPING, AND ELECTRONIC-PROPERTIES

Epitaxial undoped and Sb-doped Si films have been grown on Si(001) sub strates at temperatures T-s between 80 and 750 degrees C by ultrahigh- vacuum Kr+-ion-beam sputter deposition (IBSD). Critical epitaxial thic knesses t(e) in undoped films were found to range from 8 nm at T-s = 8 0 degrees C to >1.2 mu m at T-s greater than or equal to 300 degrees C , while Sb incorporation probabilities sigma(Sb) varied from unity at T-s less than or similar to 550 degrees C to similar or equal to 0.1 a t 750 degrees C. These t(e) and sigma(Sb) values are approximately one and one to three orders of magnitude, respectively, higher than repor ted results achieved with molecular-beam epitaxy. Temperature-dependen t transport measurements carried out on 1-mu m-thick Sb-doped IBSD lay ers grown at T-s greater than or equal to 350 degrees C showed that Sb was incorporated into substitutional sites with complete electrical a ctivity and that electron mobilities in films grown at T-s greater tha n or equal to 400 degrees C were equal to the best reported results fo r bulk Si. (C) 1996 American Institute of Physics.