TEMPERATURE-DEPENDENT SPACE-CHARGE-LIMITED CURRENTS IN AMORPHOUS AND DISORDERED SEMICONDUCTORS

Citation
F. Schauer et al., TEMPERATURE-DEPENDENT SPACE-CHARGE-LIMITED CURRENTS IN AMORPHOUS AND DISORDERED SEMICONDUCTORS, Journal of applied physics, 80(2), 1996, pp. 880-888
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
80
Issue
2
Year of publication
1996
Pages
880 - 888
Database
ISI
SICI code
0021-8979(1996)80:2<880:TSCIAA>2.0.ZU;2-Z
Abstract
The temperature dependent space-charge-limited currents (SCLCs), manif ested by the dependence of the apparent pre-exponential factor of spac e-charge-limited (SCL) conductivity on the injection dependent activat ion energy, is examined. Starting from the exact theory of SCLC, the f ormula for the activation energy of SCL injection dependent conductivi ty was derived, The method of SCL currents seems to be a unique method to determine the true electrical conductivity pre-exponential factor of the electrical conductivity. Systematic determination of the relati on of the pre-exponential factor of the conductivity on its activation energy during the measurements of voltage and temperature dependencie s of SCL currents gives information on the reliability of the reconstr uction of the density-of-electronic states. (C) 1996 American Institut e of Physics.