DETERMINATION OF ELECTRON TRAPS IN TIN DISULFIDE CRYSTALS BY THERMALLY STIMULATED CURRENT MEASUREMENTS

Electron traps have been studied by means of thermally stimulated curr ent measurements in n-SnS2 crystals grown by the chemical vapor transp ort method. TSC measurements have been carried out in the temperature range 80-300 K, and the results have been analyzed according to two di fferent methods which seem to be in good agreement with each other. In this way, two main trapping levels have been detected at 0.25 and 0.3 6 eV below the conduction band, with capture cross sections of 5.6X10( -21) and 2.7X10(-19) cm(2), respectively, These traps are probably ass ociated with structural defects. (C) 1996 American Institute of Physic s.