MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN III-V HETEROSTRUCTURES WITH DOPED QUANTUM-WELLS

The transport properties of AlGaAs/GaAslAlGaAs heterostructures with d oped GaAs quantum well have been investigated by means of an ensemble Monte Carlo method. The model accounts for nonparabolicity, size quant ization in all valleys, and degeneracy. The influence of doping profil e, density of donors and electrons, well width, and temperature are di scussed. Both steady state and transient transport have been studied, and the possibility of strong velocity overshoot has been demonstrated . The electron velocity may be strongly influenced by the spatial dist ribution of impurities. The choice of a doping plane located at one ed ge of the well allows for obtaining the highest values of mobility, st atic peak velocity, and maximum transient velocity. At high fields, so me parasitic conduction lakes place in the barriers and the transport properties are strongly affected by the characteristics of the AlGaAs layers. (C) 1996 American Institute of Physics.