CHARGE TRAPPING AND CURRENT-VOLTAGE BISTABILITY IN INGAAS QUANTUM WIRES

Authors
CINGOLANI R RINALDI R DEVITTORIO M VASANELLI L COLA A MARTI U REINHART FK
Citation
R. Cingolani et al., CHARGE TRAPPING AND CURRENT-VOLTAGE BISTABILITY IN INGAAS QUANTUM WIRES, Journal of applied physics, 80(2), 1996, pp. 936-940
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
80
Issue
2
Year of publication
1996
Pages
936 - 940
Database
ISI
SICI code
0021-8979(1996)80:2<936:CTACBI>2.0.ZU;2-F
Abstract
We report a clear evidence of bistability In the current-voltage chara cteristics of p-i-n heterostructures containing InGaAs V-shaped quantu m wires. The observed phenomenon is explained in the framework of a si ngle carrier transport model in which the quantum wires act like traps for the vertical current. The charge trapping phenomenon is indeed de monstrated by temperature-dependent photocurrent experiments. (C) 1996 American Institute of Physics.