ELECTRICAL CHARACTERIZATION AND PHYSICAL ANALYSIS OF EPITAXIAL COSI2 GROWN FROM THE SI[100] TI/CO SYSTEM/

The electrical and structural properties of epitaxial CoSi2 layers gro wn on Si by solid-state interaction between Ti/Co bimetallic layers an d Si(100) substrates have been investigated. The Schottky barrier heig ht (SBH) of the CoSi2-Si contact determined by current-voltage charact eristics at room temperature varies between 0.64 and 0.71 eV on the n- type substrates and between 0.47 and 0.43 eV on the p-type substrates. The variation of the SBH is found to be related to the Interfacial pr operties at the CoSi2-Si contact which is in turn determined by the he at treatment used for the CoSi2 formation. The formation of polycrysta lline CoSi2 is found to be responsible for the low SBH deviated from 0 .71 eV on the n-type substrates and the high SBH deviated from 0.43 eV on the p-type substrates. The formation of a ternary compound, identi fied as Co16Ti6Si7, within the epitaxial CoSi2 does not seem to affect the SBH on the n-type substrates. A permeable base transistor (PBT) w as fabricated using the epitaxial CoSi2 for self-aligned contact metal lization. The current-voltage characteristics of the PBTs are presente d. (C) 1996 American Institute of Physics.