NATURE OF COMPENSATING LUMINESCENCE-CENTERS IN TE-DIFFUSED AND TE-DOPED GASB

Diffusion of tellurium In undoped p-GaSb has been carried out. Using t he cathodoluminescence and photoluminescence techniques, the luminesce nce centers in Te-diffused samples have been identified and compared w ith the Te-doped bulk GaSb. Fundamental differences in the radiative l evels are observed between the diffused and the as-grown doped samples . Evidence for self-compensating acceptor complexes are seen in diffus ed samples. With short and moderate diffusion times, a compensating ac ceptor complex VGaGaSbTeSb is observed. For long diffusion times, the dominant acceptor center has been attributed to the antisite defect Ga -Sb or related complex. The reasons for the formation of various accep tor centers have been discussed. (C) 1996 American Institute of Physic s.