SHARP LINE INJECTION LUMINESCENCE FROM INP QUANTUM DOTS BURIED IN GAINP

InP quantum dots embedded in Ga0.5In0.5P are investigated by injection luminescence. By using a masking technique we have improved the spati al resolution. At 77 K, the luminescence peak of the fully formed InP dots occurs at about 1.62 eV. In addition, in the 1.7-1.8 eV energy ra nge, we observe a rich structure in the spectra with several sharp lin es typically 3 meV in width. The origin of this luminescence is attrib uted to the partially formed InP quantum dots. This injection luminesc ence band also exhibits spatial variations both in the envelope as wel l as in the fine structure. (C) 1996 American Institute of Physics.