SCANNING PROBE MICROSCOPY FOR TESTING ULTRAFAST ELECTRONIC DEVICES

Authors
HOU AS NECHAY BA HO F BLOOM DM
Citation
As. Hou et al., SCANNING PROBE MICROSCOPY FOR TESTING ULTRAFAST ELECTRONIC DEVICES, Optical and quantum electronics, 28(7), 1996, pp. 819-841
Citations number
22
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Optical and quantum electronics → ACNP
ISSN journal
03068919
Volume
28
Issue
7
Year of publication
1996
Pages
819 - 841
Database
ISI
SICI code
0306-8919(1996)28:7<819:SPMFTU>2.0.ZU;2-F
Abstract
Scanning force microscopy has been developed as a practical, non-conta ct probing technique for measuring voltage waveforms at internal nodes of integrated devices and circuits. Dynamic voltage contrast is achie ved with high spatial and temporal resolution. The factors contributin g to system bandwidth, voltage sensitivity and spatial resolution are discussed. Time-domain and frequency-domain measurements of silicon an d gallium arsenide circuits are presented.