PRECIPITATION OF CN AND FE IN DISLOCATED FLOATING-ZONE-GROWN SILICON

Precipitation behaviors of Cu and Fe in dislocated Floating-zone-grown silicon crystals are investigated by means of transmission electron m icroscopy (TEM) and the electron-beam-induced-current (EBIC) technique . Cu precipitation on dislocations is affected significantly by the co oling rate of a specimen after contamination. Cu develops precipitate colonies at some special sites on dislocations and does not decorate o ther parts of dislocations if the specimen is cooled slowly. These pre ferential precipitation sites are suggested to be non-dissociated edge -type dislocation segments. The fast cooling of a specimen leads to th at Cu precipitates on all of dislocations. Fe decorates all of disloca tions uniformly, irrespective of the cooling rate of a specimen.