STRESS PROPERTY OF SIGE ALLOY DEPOSITED BY VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION

We employed Raman scattering spectroscopy and stress measurements to s tudy the stress property in SiGe alloys deposited by rapid thermal pro cess, very low pressure chemical vapor deposition method. During depos ition, strain existing in the film causes Ge atoms to distribute inhom ogeneously. This effect can be suppressed by changing the reaction par ameters, such as increasing substrate temperature or Ge composition. H igh hydrogen atom coverage on the growing surface or stress relaxation of the alloy will reduce this effect.