X-RAY STANDING WAVES AND RUTHERFORD BACKSCATTERING STUDIES OF THE STRUCTURE OF SI SINGLE-CRYSTALS IMPLANTED WITH FE IONS

The X-ray standing wave and Rutherford backscattering spectroscopy in channelling geometry were applied for the investigation of the structu re of silicon single crystals implanted with 80 keV Fe ions. Both meth ods were used for the determination of crystal damage and lattice loca tion of implanted metal atoms before and after thermal annealing. Both methods gave consistent results regarding the amorphization of Si due to the Fe-ion implantation. Moreover, using both methods some Fe subs titution fraction was determined. The depth profiles of implanted atom s were compared to the results of computer simulations. Complementary use of X-ray standing wave and Rutherford backscattering spectroscopy channelling techniques for studies of radiation damage and lattice loc ation of implanted atoms is discussed.