A. Opanowicz, CHARACTERISTICS OF THERMALLY STIMULATED LUMINESCENCE AND CONDUCTIVITYOF INSULATING CRYSTAL, Acta Physica Polonica. A, 89(5-6), 1996, pp. 635-648
Different characteristics of thermally stimulated luminescence and con
ductivity in insulator are numerically calculated without the quasi-eq
uilibrium approximation. The results are compared with corresponding r
esults calculated using the quasi-equilibrium approximation. This comp
arison suggests that tile quasi-equilibrium approximation is correct i
n the low temperature range of the thermally stimulated luminescence a
nd conductivity curves for crystals which have the density of recombin
ation centres higher than 10(13) cm(-3) and the recombination coeffici
ent larger than 10(-12) cm(3) s(-1) or equivalently, for those with th
e initial free electron lifetime shorter than 10(-1) s. For the high t
emperature range of the thermally stimulated luminescence and conducti
vity curves tile quasi-equilibrium approximation gives correct results
if the recombination centres density is higher than 10(14) cm(-3) and
the recombination coefficient is larger than 10(-12) cm(3) s(-1) or i
f the initial free electron lifetime is shorter than 10(-2) s. The res
ults of this paper show also that the so-called ''first-order'' shape
of the thermally stimulated luminescence and conductivity curves is ty
pical not of the weak retrapping only, but it can be obtained also for
the strong retrapping.