SELECTIVE-AREA OXIDATION OF SI3N4 WITH AN AMBIENT SCANNING TUNNELING MICROSCOPE

Authors
DAY HC ALLEE DR
Citation
Hc. Day et Dr. Allee, SELECTIVE-AREA OXIDATION OF SI3N4 WITH AN AMBIENT SCANNING TUNNELING MICROSCOPE, Nanotechnology, 7(2), 1996, pp. 106-109
Citations number
18
Categorie Soggetti
Engineering,"Physics, Applied
Journal title
Nanotechnology → ACNP
ISSN journal
09574484
Volume
7
Issue
2
Year of publication
1996
Pages
106 - 109
Database
ISI
SICI code
0957-4484(1996)7:2<106:SOOSWA>2.0.ZU;2-2
Abstract
A scanning tunneling microscope tip has been used to selectively write oxidation patterns on a thin Si3N4 film on p(+) silicon. After etchin g the patterns in hydrofluoric acid, trenches are observed, consistent with silicon consumption in the oxidation process. The patterns in th e nitride film could be transferred to the underlying silicon with an ammonium fluoride etch.