FABRICATION OF SUBMICROMETER BURIED GOLD-PALLADIUM WIRES ON MOS2 USING ELECTRON-BEAM LITHOGRAPHY

A process is presented to fabricate a coplanar buried metal-MoS2-metal junction on the MoS2 surface. The MoS2 surface is etched with SF6 rea ctive ion etching (RIE) through a PMMA mask where the junction pattern s have been defined using the e-beam technique. The buried AuPd metall ic wires of the junction, 200 nm in width and 10 nm in thickness, are fabricated by the lift-off technique. After the RIE step, the difficul ties of reaching an electrode separation in the 40 nm range on MoS2 ar e also discussed.