CATHODIC AND ANODIC GLOW-DISCHARGE SILICON-CARBON ALLOYS (A-SI1-XCX-H) FROM X=0.5 TO 1 - A COMPARATIVE-STUDY BY PHOTOEMISSION (UPS) AND PHOTOLUMINESCENCE (PL)
F. Alvarez et al., CATHODIC AND ANODIC GLOW-DISCHARGE SILICON-CARBON ALLOYS (A-SI1-XCX-H) FROM X=0.5 TO 1 - A COMPARATIVE-STUDY BY PHOTOEMISSION (UPS) AND PHOTOLUMINESCENCE (PL), Journal of non-crystalline solids, 200, 1996, pp. 628-631
Photoluminescence (PL) and ultraviolet photoelectron spectroscopy are
used to study glow discharge amorphous silicon carbon alloys (a-Si1-xC
x:H, 1 < x < 0.5) under different substrate biases. The samples were d
eposited simultaneously on substrates located at the cathode and the a
node. The deposition conditions were those used to produce hard a-C:H
('diamond like'). In cathodic samples, ion bombardment enhances C sp(2
) bonds while in anodic samples the top of valence band is depressed.
Both ion bombardment (negative bias) and electron bombardment (positiv
e bias) decrease the PL efficiency.