CATHODIC AND ANODIC GLOW-DISCHARGE SILICON-CARBON ALLOYS (A-SI1-XCX-H) FROM X=0.5 TO 1 - A COMPARATIVE-STUDY BY PHOTOEMISSION (UPS) AND PHOTOLUMINESCENCE (PL)

Citation
F. Alvarez et al., CATHODIC AND ANODIC GLOW-DISCHARGE SILICON-CARBON ALLOYS (A-SI1-XCX-H) FROM X=0.5 TO 1 - A COMPARATIVE-STUDY BY PHOTOEMISSION (UPS) AND PHOTOLUMINESCENCE (PL), Journal of non-crystalline solids, 200, 1996, pp. 628-631
Citations number
11
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00223093
Volume
200
Year of publication
1996
Part
2
Pages
628 - 631
Database
ISI
SICI code
0022-3093(1996)200:<628:CAAGSA>2.0.ZU;2-#
Abstract
Photoluminescence (PL) and ultraviolet photoelectron spectroscopy are used to study glow discharge amorphous silicon carbon alloys (a-Si1-xC x:H, 1 < x < 0.5) under different substrate biases. The samples were d eposited simultaneously on substrates located at the cathode and the a node. The deposition conditions were those used to produce hard a-C:H ('diamond like'). In cathodic samples, ion bombardment enhances C sp(2 ) bonds while in anodic samples the top of valence band is depressed. Both ion bombardment (negative bias) and electron bombardment (positiv e bias) decrease the PL efficiency.