STRUCTURAL INVESTIGATION AND GROWTH OF [N]-TYPE MICROCRYSTALLINE SILICON PREPARED AT DIFFERENT PLASMA EXCITATION FREQUENCIES

Phosphorus doped microcrystalline silicon films prepared with very hig h frequency plasma enhanced chemical vapor deposition are characterize d with respect to their structural properties in order to get informat ion on the growth processes of this material. As deposition parameter the plasma excitation frequency is varied from 27 to 116 MHz. The expe rimental results suggest that the growth of microcrystalline silicon i s induced by the chemical equilibrium of deposition and etching, where the etching is predominantly given by the erosion of the amorphous ph ase.