PULSED-LASER-INDUCED CRYSTALLIZATION OF FLUORINATED AMORPHOUS AND MICROCRYSTALLINE SILICON FILMS

Authors
CHOI HS JANG KH MIN BH HAN MK JANG J
Citation
Hs. Choi et al., PULSED-LASER-INDUCED CRYSTALLIZATION OF FLUORINATED AMORPHOUS AND MICROCRYSTALLINE SILICON FILMS, Journal of non-crystalline solids, 200, 1996, pp. 945-948
Citations number
11
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
200
Year of publication
1996
Part
2
Pages
945 - 948
Database
ISI
SICI code
0022-3093(1996)200:<945:PCOFAA>2.0.ZU;2-I
Abstract
Laser annealing effects in fluorinated amorphous and microcrystalline silicon, in which the crystalline fraction is varied, have been invest igated. The initial film structure, as characterized by the crystallin e fraction, is found to influence the laser-induced grain growth behav ior. The surface melting time and solidification time, which are relat ed to the grain growth, are increased in the film with a critical init ial crystalline fraction, promoting grain growth and grain quality.