IMPROVEMENT OF SURFACE-MORPHOLOGY AND BULK STRUCTURE OF A-SIC-H FILMS

The influence of gas flow and H-2 dilution ratio on the built and surf ace properties of a-SiC:H films is discussed. Infrared and electron sp in resonance studies reveal that structural relaxation is achieved thr ough control of surface reactions. On the other hand, the surface morp hology as observed by atomic force microscopy is shown to be determine d by growth rate under supply-limited conditions. This evidence implie s that an improvement in bulk properties does not always lead to surfa ce smoothening. Both surface reaction control and growth rate control are found to be crucial if films with excellent bulk and surface prope rties are to be obtained.