SELECTIVE DEPOSITION OF AMORPHOUS-GERMANIUM ON SI WITH RESPECT TO SIO2 BY ORGANOMETALLIC CVD

Authors
PROKOP J MERICA R GLATZ F VEPREK S KLINGAN FR HERRMANN WA
Citation
J. Prokop et al., SELECTIVE DEPOSITION OF AMORPHOUS-GERMANIUM ON SI WITH RESPECT TO SIO2 BY ORGANOMETALLIC CVD, Journal of non-crystalline solids, 200, 1996, pp. 1026-1028
Citations number
7
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
200
Year of publication
1996
Part
2
Pages
1026 - 1028
Database
ISI
SICI code
0022-3093(1996)200:<1026:SDOAOS>2.0.ZU;2-4
Abstract
Low temperature (180 to 300 degrees C) organometallic chemical vapor d eposition (CVD) from a novel precursor yields pure films of amorphous germanium at deposition rates up to 13 Angstrom/s. The films were char acterized by X-ray diffraction (XRD), infrared absorption spectroscopy , photo electron spectroscopy (XPS) and scanning electron microscopy ( SEM). Selective deposition of amorphous germanium on Si with respect t o SiO2 is shown on a structured wafer.