LOW-BAND-GAP AMORPHOUS-SILICON DEPOSITED UNDER HE DILUTION IN THE GAMMA-REGIME OF AN RF GLOW-DISCHARGE - PROPERTIES AND STABILITY

A new type of hydrogenated amorphous silicon film having variable band gap (1.7-1.5 eV) has been developed in an rf powered plasma enhanced c hemical vapor deposition system using a mixture of silane and helium a t a subtrate temperature of 210 degrees C, The deposition conditions w ere chosen so that the rf glow discharge occurs in the gamma regime, u sually avoided because of powder formation. The influence of the chamb er pressure, on the optical gap, the hydrogen content and the electron ic properties is presented. Increasing the pressure up to 1.8 Torr is found to decrease the optical gap down to 1.5 eV. The densities of sta tes of these films were measured by electron spin resonance, constant and modulated photocurrent techniques. The density of states above the Fermi level is found to be two orders of magnitude less than that of standard amorphous silicon. Moreover, unusually fast kinetics of degra dation are observed. This new material could be a good alternative to amorphous silicon germanium alloys.