PERFORMANCE OF P-I-N SOLAR-CELLS WITH INTRINSIC MU-C-SI-H LAYER

Intrinsic microcrystalline silicon (mu c-Si:H) films deposited in a ra dio frequency (rf) glow discharge of monosilane highly diluted with hy drogen were applied to p-i-n solar cells. The open circuit voltage (V- oc) decreased and the short circuit current (I-sc) increased with the increase of crystalline fraction in the film. The experimental results suggested that the crystalline boundary affected fill factor (FF) and light degradation. It turned out that cells with high stability could be obtained in the crystalline fraction region as low as about 33%. A tandem cell with the intrinsic bottom layer of 33% crystalline fracti on had the initial and the stabilized efficiency of 9.4% and 8.5%, res pectively.