NEW A-SI-H 2-TERMINAL SWITCHING DEVICE FOR ACTIVE DISPLAY

This work presents a new two-terminal switching amorphous silicon (a-S i:H) device for active flat panel display. The device is a multilayer stacked structure n-i-delta p-i-n. The electrical characteristics of t he diode are strongly determined by its geometry and by the doping lev el of the delta p layer. The current-voltage data show a symmetrical b ehaviour with an OFF current of 10(-11) A and an ON/OFF current ratio of six orders of magnitude calculated at applied voltage of 3 and 1 V. An active matrix based on this device has been realized by using only two photolithographic masks.