DISTRIBUTION OF CHARGED DEFECTS IN A-SI-H N-I SCHOTTKY-BARRIER SOLAR-CELLS

Nickel n-i Schottky barriers solar cell structures with i-layer thickn esses between 1.0 and 2 mu m were characterized by dark I-V's at diffe rent temperatures and internal quantum efficiencies (QE). These charac teristics were modeled using AMPS (analysis of microelectronic and pho tonic structures) with charged defect distributions which were derived from results on corresponding i-layer films. This self-consistency wa s obtained with distributions of gap states which consist of charged d efects where dangling bond states are represented by three Gaussians: positively charged D+ above mid-gap; neutral D-0 around mid-gap; and n egatively charged D- below mid-gap. Excellent fits to the results on S chottky barriers and films can be obtained with these bulk distributio ns of gap states which is not true for the commonly used two Gaussian D-, D-0 gap state distributions.