STACKED A-SIC-H A-SI-H HETEROSTRUCTURES FOR BIAS-CONTROLLED 3-COLOR DETECTORS/

A family of three-terminal three-colour detectors based on stacked a-S iC:H/a-Si:H heterostructures is presented. The detectors have the asse mbly TCO/PIN/TCO/PINIP/metal and TCO/PINIP/TCO/PIN/metal and are sensi tive for the fundamental chromatic components. These two structures ar e mutually compared with regard to the calculated spectral responsivit y using our simulation program. They both exhibit a linear photocurren t/generation-rate relationship with high rejection ratios for blue, gr een and red colours at peak wavelengths 430, 530, 630 nm, applying +/- 1 V or more. Based on the optimisation analysis of their geometrical d imensions TCO/PIN/TCO/PINIP/metal structures were fabricated. In the f abricated assembly, due to the stringent thickness condition, the top PIN diode does not yet provide satisfactory results, but the PINIP str ucture renders an excellent spectral separation for green and red colo ur.