TRANSIENT PHOTOCURRENT RESPONSE OF A-SI-H BASED 3-COLOR NIPIN DETECTOR

Bandgap and defect engineered amorphous silicon based nipin photo diod es can be used as color detectors. Changing the applied voltage from - 1.5 V to -0.6 V and 1.0 V shifts the responsivity from red, to green, to blue, respectively. Wavelength dependent voltage switching and swit ching-on the illumination experiments are carried out to investigate t he transient behavior and to determine the frame rate for color detect ion. While the transient response after bias switching depends on the trapped charge in the device, the transients after switching-on the li ght is strongly influenced by the generation profile.