AMORPHOUS-SILICON UV PHOTODETECTORS WITH REJECTION OF THE VISIBLE SPECTRUM

A new family of a-Si:H/SiC:H p-i-n photodetectors is presented here. T hese devices are solar blind, with enhanced sensitivity in the extreme UV spectrum. Typical values of the quantum efficiency at 187 nm and 8 00 nm are 22% and 0.05%, respectively, with zero bias. Rise and decay times in the dark under a 1 V peak-to-peak square wave are less than 1 mu s. These devices are candidate for application in large area syste ms for detection of UV light.