LOW-TEMPERATURE (T-LESS-THAN-180 K) RELAXATION PROCESSES AND POSSIBLEELECTRONIC PHASE-SEPARATION IN RBA(2)CU(3)O(6-CRYSTALS(X) (R=Y, TM, LU) SINGLE)

Authors
LAVROV AN KOZEEVA LP
Citation
An. Lavrov et Lp. Kozeeva, LOW-TEMPERATURE (T-LESS-THAN-180 K) RELAXATION PROCESSES AND POSSIBLEELECTRONIC PHASE-SEPARATION IN RBA(2)CU(3)O(6-CRYSTALS(X) (R=Y, TM, LU) SINGLE), JETP letters, 63(10), 1996, pp. 830-834
Citations number
12
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
63
Issue
10
Year of publication
1996
Pages
830 - 834
Database
ISI
SICI code
0021-3640(1996)63:10<830:L(KRPA>2.0.ZU;2-1
Abstract
Low-temperature (120-180 K) relaxational effects are observed in oxyge n-deficient RBa(2)Cu(3)O(6+x) (R = Y, Tm, Lu) single crystals. Isother mal holding of the crystals after rapid cooling increases their resist ance. The characteristic times and the activation energy of the relaxa tion process, E(a) approximate to 0.46 eV, are determined. The possibl e relation between the observed effects and the appearance of ''electr onic phase separation'' is discussed. (C) 1996 American Institute of P hysics.