PULSED-LASER DEPOSITION OF ZNSE THIN-FILM ON SI FOR HETEROJUNCTION STUDIES

ZnSe films were deposited on p-Si and glass substrates by pulsed laser evaporation (PLE) and also by thermal evaporation (TE) at two substra te temperatures (T-s) of 300 and 523 K. Films deposited on glass were amorphous at 300 K and polycrystalline zinc-blende at 523 K. X-ray pho toelectron spectroscopy (XPS) studies showed that while both types of films deposited on Si were Zn rich, the PLE films had better stoichiom etry for T-s = 300 K and TE films for T-s = 523.K. n-ZnSe/p-Si heteroj unctions fabricated by PLE and TE were characterised by current voltag e (I-V) and capacitance-voltage (C-V) techniques from which the ideali ty factor n, reverse saturation current density J(o) and relative diel ectric constants epsilon(r) were determined. These measurements showed that films with better stoichiometry resulted in:heterojunctions with lower n and J(o).