STUDY OF ELECTRICAL-TRANSPORT PROPERTIES OF (U1-XYX)RU2SI2

Citation
S. Radha et al., STUDY OF ELECTRICAL-TRANSPORT PROPERTIES OF (U1-XYX)RU2SI2, Physica. B, Condensed matter, 224(1-4), 1996, pp. 195-197
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
224
Issue
1-4
Year of publication
1996
Pages
195 - 197
Database
ISI
SICI code
0921-4526(1996)224:1-4<195:SOEPO(>2.0.ZU;2-6
Abstract
Electrical resistivity and magnetoresistance (Delta rho/rho) measureme nts on a series of (U1-xYx)Ru2Si2 (0 less than or equal to x less than or equal to 0.9) compounds in the temperature range 4.2-300 K and in magnetic fields up to 45 kOe are reported. The resistivity measurement s do not show any signature of antiferromagnetism for x > 0.5. The com pound URu2Si2 exhibits a large, positive (Delta rho/rho) presumably du e to destruction of Kondo coherence as well as due to antiferromagneti sm. The presence of even 5% Y at U-site weakens the Kondo coherence an d reduces the magnetoresistance considerably.