EFFECT OF PRESSURE ON THE ELECTRICAL-RESISTIVITY AND HALL-EFFECT IN SINGLE-CRYSTALS OF CERHSB

The Hall effect and electrical resistivity have been measured under pr essure up to 7.3 kbar using purified single crystals of CeRhSb. Electr ical resistivity and especially the Hall coefficient show a large incr ease under pressure at low temperatures. These results could be due to an increase of the gap energy under pressure (confirmed by an Arrheni us plot of the resistivity and Hall effect data). These pressure effec ts are anisotropic and the minimum is for I parallel to a, H parallel to b. It is notable that the b direction coincides with the minimum la ttice constant of the orthorhombic structure.