X-RAY STRUCTURE, ELECTRICAL-RESISTIVITY, HALL-EFFECT AND THERMOELECTRIC BEHAVIOR OF (HG CR)(1)SR2CUOY/

Citation
B. Bandyopadhyay et al., X-RAY STRUCTURE, ELECTRICAL-RESISTIVITY, HALL-EFFECT AND THERMOELECTRIC BEHAVIOR OF (HG CR)(1)SR2CUOY/, Physica. B, Condensed matter, 224(1-4), 1996, pp. 580-583
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
224
Issue
1-4
Year of publication
1996
Pages
580 - 583
Database
ISI
SICI code
0921-4526(1996)224:1-4<580:XSEHAT>2.0.ZU;2-F
Abstract
X-ray structural analysis of Hg0.7Cr0.3Sr2CuOy (nominal composition) w as done by Rietveld technique. The actual composition of the system an d the position of the ions obtained from the analysis will be presente d. The c-axis of this system is 0.9 A less than that of HgBa2CuO4+delt a. The T-c value obtained from resistivity measurement is similar to 5 1 K. The Hall angle cot O-H (rho/BR(H)) shows a T-2 temperature depend ence. Thermoelectric power is positive and large, indicating that the system is in the underdoped region.