TRANSPORT-PROPERTIES OF V-4 AND MO-4 CLUSTER COMPOUNDS - AN ELECTRON GLASS

Citation
Ak. Rastogi et A. Niazi, TRANSPORT-PROPERTIES OF V-4 AND MO-4 CLUSTER COMPOUNDS - AN ELECTRON GLASS, Physica. B, Condensed matter, 224(1-4), 1996, pp. 588-590
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
224
Issue
1-4
Year of publication
1996
Pages
588 - 590
Database
ISI
SICI code
0921-4526(1996)224:1-4<588:TOVAMC>2.0.ZU;2-T
Abstract
DC and AC conductivity, thermopower and non-ohmic conduction propertie s have been reported for GaV4S8 and GaMo4Se4Te4. The transport propert ies indicate the formation of electron glass state at low temperature. In a simplified model the band spread of localised states, DOS and lo calisation length are estimated. Coulomb gap effects in variable range hopping (VRH) and AC conductivity sigma(ac)(omega) are found in the m ore ordered Mo-4 compound. Both the compounds show negative resistance behaviour at high current densities that may indicate the melting of the electron glass.