STABILITY OF LOW BANDGAP A-SI-H PREPARED BY CONVENTIONAL PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Authors
HAZRA S MIDDYA AR RAY S
Citation
S. Hazra et al., STABILITY OF LOW BANDGAP A-SI-H PREPARED BY CONVENTIONAL PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Solid state communications, 101(2), 1997, pp. 115-118
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
101
Issue
2
Year of publication
1997
Pages
115 - 118
Database
ISI
SICI code
0038-1098(1997)101:2<115:SOLBAP>2.0.ZU;2-E
Abstract
Light induced degradation of low bandgap a-Si:H, prepared by using hel ium dilution in gamma-regime of r.f. glow discharge, have been studied . Presence of electronically excited He atoms (20 eV and 24 eV) produc e compact and rigid network of low bandgap a-Si:H. Due to improved mic rostructure, electronic properties of such materials degrade only 10 h under prolonged illumination. Above all, saturated photoconductivity under light soaking is comparable to that at annealed state of normal bandgap a-Si:H. Copyright (C) 1996 Elsevier Science Ltd