FORMATION OF BETA-C3N4 PHASE IN C-N FILMS DEPOSITED BY REACTIVE IONIZED CLUSTER BEAM METHOD

Citation
Jy. Feng et al., FORMATION OF BETA-C3N4 PHASE IN C-N FILMS DEPOSITED BY REACTIVE IONIZED CLUSTER BEAM METHOD, Materials letters, 27(4-5), 1996, pp. 219-223
Citations number
19
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
27
Issue
4-5
Year of publication
1996
Pages
219 - 223
Database
ISI
SICI code
0167-577X(1996)27:4-5<219:FOBPIC>2.0.ZU;2-E
Abstract
Carbon nitride thin films have been prepared by the reactive ionized c luster beam (RICE) method using mixed beam of activated carbon and nit rogen atoms and atom clusters produced from polyethylene and NH3. The structure of the films has been characterized by electron diffraction analysis that shows strong evidences suggesting the formation of cryst alline beta-C3N4 phase embedded in the amorphous film matrix. Rutherfo rd backscattering measurements show that average nitrogen content is u p to 40%. X-ray photoelectron spectroscopy indicates that carbon and n itrogen form a weak polarized covalent bond in these C-N thin films.