NOISE IN PHOTOSENSITIVE METAL-RESISTIVE LAYER SEMICONDUCTOR STRUCTURES

The noise spectral density and the amplitude distribution of noise pul ses are studied in photodetectors based on metal-resistive layer-semic onductor (MRS) structures. The structures exhibited an increase in the noise spectral density at frequencies similar to 100 kHz. The amplitu de distributions of noise pulses revealed that the contribution of the rmal-emission noise to the noise spectrum was insignificant, while the dominant contribution was made by avalanche multiplication noise. The threshold sensitivity of MRS structures on the basis of the obtained dependences was estimated.