EXPERIMENTAL-VERIFICATION OF CALCULATED IGBT LOSSES IN PFCS

Measurements of insulated gate bipolar transistor (IGBT) losses in mod ulated converters present a difficult challenge because of the wide va riations in the waveforms. As an alternative, earlier references [1, 2 ] provided a means of calculating these losses from out-of-circuit tes t data, but no experimental verification was presented. To provide thi s verification, this present study compares these calculated losses wi th measured losses obtained from the temperature rise of the heat sink of the IGBT. These experimental results agree quite well with the ear lier loss calculations, and the largest deviation for four test cases is less than 4%.