SHALLOW THERMAL DONOR DEFECTS IN SILICON

Citation
Cp. Ewels et al., SHALLOW THERMAL DONOR DEFECTS IN SILICON, Physical review letters, 77(5), 1996, pp. 865-868
Citations number
34
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
77
Issue
5
Year of publication
1996
Pages
865 - 868
Database
ISI
SICI code
0031-9007(1996)77:5<865:STDDIS>2.0.ZU;2-7
Abstract
An ab initio local density functional cluster program, AIMPRO, is used to examine nitrogen related shallow thermal donor defects in silicon. We find the bonding of oxygen with interstitial nitrogen in N-i-O-2i to be almost ''normal,'' but the O atoms move slightly out of their bo nd centered sites causing the deep donor level of N-i to become shallo w. The defect has properties consistent with those experimentally obse rved for shallow thermal donors. We also find that a CiH-O-2i defect h as very similar electronic properties, and suggest that shallow therma l donors do not have a unique composition.