MODELING OF PLASMA SURFACE INTERACTIONS

In this article, we present a review of different approaches to simula te the plasma deposition and etching processes emphasizing work perfor med by the authors in the last few years. For deposition models two ex amples illustrating the kinetics of thin film deposition by plasma are discussed: the first one in the CH4 plasma deposition model of alpha- C:H. This model is closely coupled to both a plasma physics model and a gas phase chemistry model. The second one is the deposition model of SiO2 by TEOS/O-2. The surface kinetic processes are randomly introduc ed using the Monte-Carlo method. For plasma etching, the non-linear ef fects on the enhanced plasma etching rate due to the ion bombardment a re discussed. The macroscopic model can explain correctly the synergy effect between ions and neutral species. In addition, 2D simulations o f plasma etching profile are presented. We introduce the effect of the local surface etching rate variation as a function of the aspect rati o (depth/width) for etched features.