CORRELATION BETWEEN SCATTERING BEHAVIOR OF HCP SINGLE-CRYSTALS AND INCORPORATED DISLOCATION ARRANGEMENT QUANTIFIED BY THE FOURIER TRANSFORMATION

A new approach is proposed for studying the diffraction intensity dist ribution of the single crystals with nearly parallel dislocations. Thi s approach can be directly applied on the realistic dislocation config urations in the crystals which can be made visible as etching-pits by proper etching procedures. The displacement field is estimated by the superposition of the displacements from all the dislocations. The diff raction behaviour on the plane which is perpendicular to those disloca tions is determined by a Fourier transformation algorithms.