ANISOTROPY IN THE HALL-COEFFICIENT AND RESISTIVITY OF GERMANIUM-DOPEDSINGLE-CRYSTAL BE2TE2.85SE0.15

Authors
SVECHNIKOVA TE KORZHUEV MA MAKSIMOVA NM KONSTANTINOV PP ALEKSEEVA GT
Citation
Te. Svechnikova et al., ANISOTROPY IN THE HALL-COEFFICIENT AND RESISTIVITY OF GERMANIUM-DOPEDSINGLE-CRYSTAL BE2TE2.85SE0.15, Semiconductors, 30(7), 1996, pp. 609-613
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
7
Year of publication
1996
Pages
609 - 613
Database
ISI
SICI code
1063-7826(1996)30:7<609:AITHAR>2.0.ZU;2-K
Abstract
The anisotropy in the Hall coefficient R and resistivity rho of german ium-doped (batch Ge content x=0-1 at.%) single crystal n-Bi2Te2.85Se0. 15 is studied in the temperature range 80-410 K. In doped samples the Hall factor (B) over bar=(2B(231)+B-123)/3 and the anisotropy in the H all coefficient R(231)/R(123) increase, while the anisotropy in the re sistivity rho(33)/rho(11) decreases, because of enhanced anisotropic s cattering of current carriers when dopant is added. (C) 1996 American Institute of Physics.