Ga. Sukach, RADIATION-INDUCED CONVERSION OF RADIATIVE EXCITON COMPLEXES ASSOCIATED WITH NITROGEN IN P-N-STRUCTURES BASED ON GAP-N, Semiconductors, 30(7), 1996, pp. 618-620
The spectral, kinetic, and amplitude characteristics of electrolumines
cence in light-emitting structures based on GaP:N irradiated by neutro
ns (at doses Phi=10(10)-10(13) cm(-2)) are studied. We observe the rad
iation-induced formation of NN1 complexes of nearest nitrogen atoms by
means of association of isolated atoms of the isoelectronic nitrogen
impurity when their diffusion through nonradiative complexes is enhanc
ed. This situation favors a growth in the emission intensity in the se
ries of excitons bound to the NN1 complexes. This is confirmed by a di
screpancy in the dose dependences of the emission intensities from A-
and NN1-excitons and the lifetime of the current carriers. The behavio
r of these dependences suggests that N-p is generated during capture o
f optically inactive interstitial nitrogen atoms N-i by easily mobile
radiation vacancies of phosphorus, as well as by association of N-p in
the N-p-N-p pairs. (C) 1996 American Institute of Physics.