RADIATION-INDUCED CONVERSION OF RADIATIVE EXCITON COMPLEXES ASSOCIATED WITH NITROGEN IN P-N-STRUCTURES BASED ON GAP-N

Authors
Citation
Ga. Sukach, RADIATION-INDUCED CONVERSION OF RADIATIVE EXCITON COMPLEXES ASSOCIATED WITH NITROGEN IN P-N-STRUCTURES BASED ON GAP-N, Semiconductors, 30(7), 1996, pp. 618-620
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
30
Issue
7
Year of publication
1996
Pages
618 - 620
Database
ISI
SICI code
1063-7826(1996)30:7<618:RCOREC>2.0.ZU;2-Z
Abstract
The spectral, kinetic, and amplitude characteristics of electrolumines cence in light-emitting structures based on GaP:N irradiated by neutro ns (at doses Phi=10(10)-10(13) cm(-2)) are studied. We observe the rad iation-induced formation of NN1 complexes of nearest nitrogen atoms by means of association of isolated atoms of the isoelectronic nitrogen impurity when their diffusion through nonradiative complexes is enhanc ed. This situation favors a growth in the emission intensity in the se ries of excitons bound to the NN1 complexes. This is confirmed by a di screpancy in the dose dependences of the emission intensities from A- and NN1-excitons and the lifetime of the current carriers. The behavio r of these dependences suggests that N-p is generated during capture o f optically inactive interstitial nitrogen atoms N-i by easily mobile radiation vacancies of phosphorus, as well as by association of N-p in the N-p-N-p pairs. (C) 1996 American Institute of Physics.