SYSTEMATIC FEATURES OF THE DIFFUSION OF IMPURITIES IN CD0.2HG0.8TE

Citation
Av. Gorshkov et al., SYSTEMATIC FEATURES OF THE DIFFUSION OF IMPURITIES IN CD0.2HG0.8TE, Semiconductors, 30(7), 1996, pp. 629-634
Citations number
48
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
30
Issue
7
Year of publication
1996
Pages
629 - 634
Database
ISI
SICI code
1063-7826(1996)30:7<629:SFOTDO>2.0.ZU;2-H
Abstract
The diffusion of Na, K, Ca, C, Cr, Fe, Co, and Ni in Cd0.2Hg0.8Te is s tudied by the method of tracer atoms. The basic parameters of the diff usion process are determined. The experimental results on the diffusio n of 17 elements in cadmium-mercury-tellurium compounds are generalize d. It is shown that the migration mechanism depends on the size of the atoms. Empirical equations are obtained for calculating the activatio n energy E(act) and the preexponential factor D-0 in the expression fo r the diffusion coefficient D=D-0(-E(act)/kT) according to the charact eristics of the diffusant (melting entropy, atomic mass) and the cryst al (lattice constant, solidus temperature). The experimental values of the diffusion parameters agree satisfactorily with the calculated val ues. (C) 1996 American Institute of Physics.