METHOD FOR RAPID-DETERMINATION OF THE INTERFACE PARAMETERS OF PLANAR-NONUNIFORM MIS STRUCTURES

A simple experimental method is proposed for determining the density o f surface states and their trapping cross section, taking into account the nonuniform distribution of the surface potential in the MIS struc ture. In contrast to existing methods, which are based on the analysis of the frequency or temperature dependences of the small-signal condu ctivity of MIS structures, the average values of the parameters of the surface states and the standard deviation of the fluctuations of the surface potential are calculated from measurements of the conductivity -voltage characteristics at fixed frequency and temperature. (C) 1996 American Institute of Physics.