SOME CHARACTERISTICS OF ASIZNGA PAIRS INDUCED IN P-TYPE GAAS(ZN) BY RADIATION-THERMAL ACTION

The effect of low-temperature (T=77 K) electron irradiation (Phi=1 X 1 0(16) electrons/cm(2)) and subsequent annealings (T=80-500 K) of p-GaA s(Zn) crystals on the formation and annihilation of AsiZnGa pairs is s tudied. It is shown that efficient AsiZnGa pair generation is observed in the temperature interval 20-225 degrees C. Analysis of the kinetic s of the formation and annihilation of AsiZnGa pairs made it possible to determine the diffusion coefficient D of radiation-stimulated inter stitial arsenic atoms [D similar or equal to 10(17) cm(2)/s at 20 degr ees C, D similar to exp(-0.45/kT) at 20-100 degrees C], the activation energy of the process from diffusion epsilon(m)=0.45 eV, the binding energy between the components of AsiZnGa pairs epsilon(b)=0.55 eV, and also the dissociation energy of AsiZnGa pairs epsilon(d)=1.0 eV. (C) 1996 American Institute of Physics.